(China (Mainland))
Product Summary
The 2SB1132T100R is a Medium Power Transistor.
Parametrics
2SB1132T100R absolute maximum ratings: (1)collector-base voltage: -40 V; (2)collector-emitter voltage: -32 V; (3)emitter-base voltage: -5 V; (4)collector current: -1 A (DC), -2 A (Pulse); (5)collector power dissipation: 0.5 W; (6)junction temperature: 150 ℃; (7)storage temperature: -55 to +150 ℃.
Features
2SB1132T100R features: (1)Low VCE(sat) = -0.2V (Typ.) (IC/IB = -500mA/-50mA); (2)Compliments 2SD1664/2SD1858.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 2SB1132T100R |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 32V 1A |
Data Sheet |
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2SB1000 |
Other |
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Data Sheet |
Negotiable |
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2SB1000A |
Other |
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Data Sheet |
Negotiable |
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2SB1001 |
Other |
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Data Sheet |
Negotiable |
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2SB1002 |
Other |
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Data Sheet |
Negotiable |
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2SB1005 |
Other |
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Data Sheet |
Negotiable |
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2SB1007 |
Other |
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Data Sheet |
Negotiable |
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