(China (Mainland))
Product Summary
The ISSI IS62WV51216BLL-55T is a highspeed, 8M bit static RAM organized as 512K words by 16 bits. It is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process of IS62WV51216BLL-55T coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.
Parametrics
IS62WV51216BLL-55T absolute maximum ratings: (1)Terminal Voltage with Respect to GND: –0.2 to VDD+0.3 V; (2)Temperature Under Bia: –40 to +85 ℃; (3)VDD Related to GND: –0.2 to +3.8 V; (4)Storage Temperature: –65 to +150 ℃; (5)Power Dissipation: 1.0 W.
Features
IS62WV51216BLL-55T features: (1)High-speed access time: 45ns, 55ns; (2)CMOS low power operation: 36 mW (typical) operating, 12 μW (typical) CMOS standby; (3)TTL compatible interface levels; (4)Single power supply; (5)1.65V--2.2V VDD (62WV51216ALL); (6)2.5V--3.6V VDD (62WV51216BLL); (7)Fully static operation: no clock or refresh required; (8)Three state outputs; (9)Data control for upper and lower bytes; (10)Industrial temperature available; (11)Lead-free available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IS62WV51216BLL-55TI |
ISSI |
SRAM 8Mb 512Kx16 55ns 2.5v/3.6v |
Data Sheet |
Negotiable |
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IS62WV51216BLL-55TI-TR |
ISSI |
SRAM 8Mb 512Kx16 55ns 2.5v/3.6v |
Data Sheet |
Negotiable |
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IS62WV51216BLL-55TLI |
ISSI |
SRAM 8Mb 512Kx16 55ns Async SRAM |
Data Sheet |
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IS62WV51216BLL-55TLI-TR |
ISSI |
SRAM 8Mb 512Kx16 55ns Async SRAM |
Data Sheet |
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