(China (Mainland))
Product Summary
The K9F1G08U0C-PCB0 is a 128M x 8 Bit NAND Flash Memory. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation of K9F1G08U0C-PCB0 can be performed in typical 300ms on the 2112-byte page and an erase operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 50ns (30ns, K9F1G08U0C-PCB0) cycle time per byte.
Parametrics
K9F1G08U0C-PCB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS: -0.6 to + 2.45 V; (2)Temperature Under Bias: -10 to +125 ℃; (3)Storage Temperature: -65 to +150 ℃; (4)Short Circuit Current: 5 mA.
Features
K9F1G08U0C-PCB0 features: (1)Voltage Supply: 1.8V device (K9F1G08Q0A): 1.70V~1.95V, 3.3V device(K9F1G08U0A): 2.7 V ~3.6 V; (2)Organization: Memory Cell Array: (128M + 4,096K)bit x 8bit, Data Register: (2K + 64)bit x8bit, Cache Register: (2K + 64)bit x8bit; (3)Automatic Program and Erase: Page Program: (2K + 64)Byte, Block Erase: (128K + 4K)Byte; (4)Page Read Operation: Page Size: 2K-Byte, Random Read: 25ms(Max.), Serial Access: 30ns(Min.): (K9F1G08U0A); (5)50ns(Min.): (K9F1G08Q0A).
Diagrams
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 K9F1208D0A |
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K9F1208Q0A-XXB0 |
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K9F1208Q0B |
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K9F1208R0B |
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K9F1208U0A |
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K9F1208U0A-VCB0 |
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