BTS7960B

half bridge, TO-263-7, -0.3 to 45 V

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Price:: US $2.70~3.00 / piece [Get Latest Price]

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	US $2.70~3.00

PartNumber:: BTS7960B

Brand:: Infineon Technologies AG - Infineon | Pack: TO | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-07-24

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Part Number:BTS7960B
US $2.70 - 3.00
ECA1HHG4R7

US $10.00 - 10.00 / Piece
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HEF4093BT

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Product Summary

The BTS7960B is a fully integrated high current half bridge for motor drive applications. It is part of the NovalithICTM family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller of BTS7960B is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit.

Parametrics

BTS7960B absolute maximum ratings: (1)Supply voltage: -0.3 to 45 V; (2)Logic Input Voltage: -0.3 to 5.3 V; (3)HS/LS continuous drain current: -40 to 40 A at TC < 85℃, switch active; (4)HS pulsed drain current: -60 to 60 A at TC < 85℃, tpulse = 10ms; (5)LS pulsed drain current: -60 to 60 A at TC < 85℃, tpulse = 10ms; (6)Voltage at SR pin: -0.3 to 1.0 V; (7)Voltage between VS and IS pin: -0.3 to 45 V; (8)Voltage at IS pin: -20 to 45 V; (9)Junction temperature: -40 to 150 ℃; (10)Storage temperature: -55 to 150 ℃.

Features

BTS7960B features: (1)Path resistance of typ. 16 mΩ @ 25 ℃; (2)Low quiescent current of typ. 7 μA @ 25 ℃; (3)PWM capability of up to 25 kHz combined with active freewheeling; (4)Switched mode current limitation for reduced power dissipation in overcurrent; (5)Current limitation level of 43 A typ.; (6)Status flag diagnosis with current sense capability; (7)Overtemperature shut down with latch behaviour; (8)Overvoltage lock out; (9)Undervoltage shut down; (10)Driver circuit with logic level inputs; (11)Adjustable slew rates for optimized EMI.